Fundamental Study of InP-Based Open-Gate Field Effect Transistors for Application to Liquid-Phase Chemical Sensors
Fundamental Study of InP-Based Open-Gate Field Effect Transistors for Application to Liquid-Phase Chemical Sensors
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用于液相化学传感器的 InP 基开栅场效应晶体管的基础研究
DOI：
10.1143/jjap.48.091102
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发表时间：
2009
影响因子：
1.5
通讯作者：
T. Hashizume
中科院分区：
文献类型：
--
作者：
N. Yoshizawa;T. Sato;T. Hashizume
本文证明了基于inp的开栅场效应晶体管（fet）作为液相化学传感器工作良好。开栅场效应管在电解质中明显表现出电流饱和和掐断行为，导致对通过电解质施加的栅极偏置的快速响应。一系列的传感测量表明，在pH值为3.0 ~ 12.0的范围内，InP的表面电位随电解质的pH值呈线性变化。开栅场效应管的pH敏感性取决于电解质中所含的离子种类。si3n4层可作为离子选择膜用于InP开栅场效应管，以提高H+离子的选择性。
We prove with this paper that InP-based open-gate field-effect transistors (FETs) work well as liquid-phase chemical sensors. The open-gate FET clearly exhibited current saturation and a pinch-off behavior in the electrolyte, resulting in a rapid response to the gate bias applied via the electrolyte. A series of sensing measurements showed that the surface potential of the InP linearly changed with the pH values of the electrolytes in a pH range from 3.0 to 12.0. The pH sensitivity of the open-gate FETs depended on the ion species contained in the electrolyte. A Si 3 N 4 layer was useful as an ion selective membrane for the InP open-gate FETs to improve the selectivity of H+ ions.