From ballistic transport to tunneling in electromigrated ferromagnetic breakjunctions
From ballistic transport to tunneling in electromigrated ferromagnetic breakjunctions
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DOI：
10.1021/nl0522936
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发表时间：
2006-01-01
期刊：
影响因子：
10.8
通讯作者：
Ralph, DC
中科院分区：
文献类型：
--
作者：
Bolotin, KI;Kuemmeth, F;Ralph, DC
我们制造了具有收缩的铁磁纳米线，其横截面可以从100 × 30 nm（2）逐渐减小到原子尺度，并最终通过电迁移到隧穿区。这些触点具有机械和热稳定性。我们测量低温磁电阻;（MR）< 3%的接触< 400 Ω，可再现的MR变化，是非单调的制度400 Ω- 25 k Ω，和最大MR的80%的原子尺度的宽度。这些结果的设备> 400 Ω不同于以前的室温研究电沉积设备。对于隧穿区的样品，我们观察到MR的大波动，在-10至85%之间。
We fabricate ferromagnetic nanowires with constrictions whose cross section can be reduced gradually from 100 x 30 nm(2) to the atomic scale and eventually to the tunneling regime by means of electromigration. The contacts are mechanically and thermally stable. We measure low-temperature magnetoresistances; (MR) < 3% for contacts < 400 Omega, reproducible MR variations that are nonmonotonic in the regime 400 Omega - 25 k Omega, and a maximum MR of 80% for atomic-scale widths. These results for devices > 400 Omega differ from previous room-temperature studies of electrodeposited devices. For samples in the tunneling regime, we observe large fluctuations in MR, between -10 and 85%.