Investigation of electrically-active defects in Sb2Se3 thin-film solar cells with up to 5.91% efficiency via admittance spectroscopy
Investigation of electrically-active defects in Sb2Se3 thin-film solar cells with up to 5.91% efficiency via admittance spectroscopy
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研究%20of%20电活性%20缺陷%20in%20Sb2Se3%20薄膜%20太阳能%20细胞%20with%20up%20to%205.91%%20效率%20via%20导纳%20光谱
DOI：
10.1016/j.solmat.2018.07.004
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发表时间：
2018-11-01
影响因子：
6.9
通讯作者：
Chu, Junhao
中科院分区：
文献类型：
--
作者：
Hu, Xiaobo;Tao, Jiahua;Chu, Junhao
对能量转换效率为3.85% ~ 5.91%的sb2se3薄膜太阳能电池进行了导纳测量。所有细胞在价带最大值（VBM）以上的0.3 ~ 0.4、0.2 ~ 0.6和0.5 ~ 0.6 eV范围内鉴定出3个不同能级的缺陷，分别记为Dl、D2和D3；在这些范围内，每个缺陷的确切能级因细胞而异。研究了缺陷性质与电池效率之间的关系，发现Dl和D2的活化能都随着效率的降低而增加，Dl和D2的空穴捕获寿命都随着效率的提高而增加，而D3与效率没有明显的关系。这表明Dl和D2可能在影响被测样品的效率方面发挥更重要的作用。直流反向偏置相关导纳测量使Dl和D2被识别为体型缺陷，而D3被识别为界面或近界面型缺陷。最后，认为在高频范围（bbb10 (5) Hz）内，主导导纳谱的是较大的寄生串联电阻和电感效应，而不是缺陷。
Admittance measurements were performed on Sb2Se3-based thin-film solar cells with energy conversion efficiencies from 3.85% to 5.91%. Three defects located at different energy levels above the valence band maximum (VBM) in the ranges of 0.3-0.4, 0.2-0.6 and 0.5-0.6 eV were identified for all cells and denoted Dl, D2 and D3, respectively; the exact energy level of each defect within these ranges varied between cells. Correlations between the defect properties and the cell efficiencies were investigated and it was found that the activation energies of both Dl and D2 increased with decreasing efficiencies, the capture lifetime of holes increased with increasing efficiencies for both Dl and D2, and no obvious relationship with efficiency was found for D3. This indicated that Dl and D2 may play more important roles that affect the efficiencies in the measured samples. DC reverse bias dependent admittance measurements enabled identification of Dl and D2 as bulk-type defects while D3 was identified as an interface or near-interface type defect. Finally, large parasitic series resistance and inductance effect, instead of defects, were considered to dominate the admittance spectra in the high frequency range (> 10(5) Hz).