Formation of a high quality two-dimensional electron gas on cleaved GaAs
Formation of a high quality two-dimensional electron gas on cleaved GaAs
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在解理 GaAs 上形成高质量二维电子气
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
J. Spector
中科院分区：
文献类型：
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作者：
L. Pfeiffer;K. West;H. Stormer;J. Eisenstein;K. Baldwin;D. Gershoni;J. Spector
我们用分子束外延(MBE)技术在(110)解理边成功地制备了二维电子气(2DEG)。将先前由MBE生长制备的(100)晶片重新安装在MBE室中，使得原位解理暴露出新的(110)GaAs边缘，以用于进一步的MBE过度生长。一系列掺硅的AlGaAs层在解理边缘完成了调制掺杂结构。在解理界面的二维电子气中测得S的迁移率高达6.1×10^5 cm/V。
We have succeeded in fabricating a two-dimensional electron gas (2DEG) on the cleaved (110) edge of a GaAs wafer by molecular beam epitaxy (MBE). A (100) wafer previously prepared by MBE growth is reinstalled in the MBE chamber so that an in situ cleave exposes a fresh (110) GaAs edge for further MBE overgrowth. A sequence of Si-doped AlGaAs layers completes the modulation-doped structure at the cleaved edge. Mobilities as high as 6.1×10^5 cm^2/V s are measured in the 2DEG at the cleaved interface.