Coupled-mode theory of the Raman effect in silicon-on-insulator waveguides.
Coupled-mode theory of the Raman effect in silicon-on-insulator waveguides.
复制标题
绝缘体上硅波导拉曼效应的耦合模式理论。
作者：
D. Dimitropoulos;B. Houshmand;R. Claps;B. Jalali
耦合模式理论用于计算横截面积为 0.16 至 16 µm2 的硅波导的拉曼增益和自发效率。我们发现，在所考虑的尺寸范围内，随着波导横截面的减小，拉曼增益单调增加。还发现斯托克斯模式之间的模式耦合是微不足道的，因此偏振复用是可能的。结果还表明，对于亚微米波导尺寸，自发效率和受激增益之间的爱因斯坦关系不再成立。
Coupled-mode theory is used to calculate Raman gain and spontaneous efficiency in silicon waveguides with cross-sectional areas ranging from 0.16 to 16 microm2. We find a monotonic increase in the Raman gain as the waveguide cross section decreases for the range of dimensions considered. It is also found that mode coupling between the Stokes modes is insignificant, and thus polarization multiplexing is possible. The results also demonstrate that for submicrometer waveguide dimensions the Einstein relation between spontaneous efficiency and stimulated gain no longer holds.