Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors
Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors
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DOI：
10.1063/1.1788888
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发表时间：
2004-09
影响因子：
4
通讯作者：
T. Low;Ming-Fu Li;C. Shen;Y. Yeo;Y. Hou;Chunxiang Zhu;A. Chin;D. Kwong
中科院分区：
文献类型：
--
作者：
T. Low;Ming-Fu Li;C. Shen;Y. Yeo;Y. Hou;Chunxiang Zhu;A. Chin;D. Kwong
系统地研究了应变硅和各种表面取向锗超薄体（UTB）金属氧化物半导体场效应晶体管（MOSFET）中的电子迁移率。对于双轴拉伸应变Si UTB MOSFET，应变效应提供迁移率增强，直到3nm的主体厚度，在该厚度以下，强量子限制效应通过施加多余的应变而呈现进一步的谷分裂。对于Ge沟道UTBMOSFET，发现电子迁移率高度依赖于表面取向。Ge 100 μ m和Ge 110 μ m表面具有低量子化质量，这导致在积极缩放的UTB MOSFET中的迁移率低于Si。
Electron mobility in strained silicon and various surface oriented germanium ultrathin-body (UTB) metal-oxide semiconductor field-effect transistors (MOSFETs) with sub-10-nm-body thickness are systematically studied. For biaxial tensile strained-Si UTB MOSFETs, strain effects offer mobility enhancement down to a body thickness of 3nm, below which strong quantum confinement effect renders further valley splitting via application of strain redundant. For Ge channel UTB MOSFETs, electron mobility is found to be highly dependent on surface orientation. Ge⟨100⟩ and Ge⟨110⟩ surfaces have low quantization mass that leads to a lower mobility than that of Si in aggressively scaled UTB MOSFETs.