Electron‐beam cell‐projection lithography system
Electron‐beam cell‐projection lithography system
复制标题
电子束单元投影光刻系统
DOI：
10.1116/1.585997
复制
发表时间：
1992
影响因子：
1.4
通讯作者：
M. Okumura
中科院分区：
文献类型：
--
作者：
Y. Sakitani;H. Yoda;H. Todokoro;Y. Shibata;T. Yamazaki;K. Ohbitu;N. Saitou;S. Moriyama;S. Okazaki;G. Matuoka;F. Murai;M. Okumura
针对四分之一微米大规模集成存储器和专用集成电路（asic）的批量生产，开发了电子束曝光系统HL‐800D。为了达到生产水平，该系统采用了细胞投影法，结合可变形状法和根据图案密度以可变速度连续移动的阶段。系统工作在50kv加速电压和1 μC/cm2剂量下。开发了三级偏转器，以确保高速偏转和高精度定位。快速模式控制器在200 ns射击周期内生成模式数据，并进行定位误差校正和接近效应校正。研制了高速陶瓷XY工作台和自动压片机。该系统由工作站操作，并提供数据转换。该系统的估计吞吐量为0.3 μm asic /小时11片，四分之一微米存储器/小时20片。
An electron‐beam exposure system HL‐800D has been developed for the mass production of both quarter micron large‐scale integrated memories and application specific integrated circuits (ASICs). To achieve a productive level of throughput, the system utilizes a cell‐projection method combined with variable shaped method and a continuously moving stage at variable speed depending on the pattern density. The system is operated at a 50 kV acceleration voltage and a 1 μC/cm2 dosage. Three stage deflectors have been developed to assure high‐speed deflection and highly accurate positioning. A fast pattern controller generates patern data at 200 ns shot‐cycle‐time with the positioning error correction and proximity effect correction. A high‐speed ceramic XY stage and an automatic wafer loder have been developed. The system is operated by a workstation which also provides data conversion. The estimated throughput of the system is 11 wafers/h for 0.3 μm ASICs and 20 wafers/h for quarter micron memories.