Investigation of device geometry- and temperature-dependent characteristics of AlGaN/GaN lateral field-effect rectifier
Investigation of device geometry- and temperature-dependent characteristics of AlGaN/GaN lateral field-effect rectifier
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DOI：
10.1088/0268-1242/28/1/015021
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发表时间：
2012
影响因子：
1.9
通讯作者：
Wanjun Chen;Jing Zhang;Zhigang Wang;Jin Wei;Bo Zhang;K. J. Chen
中科院分区：
文献类型：
--
作者：
Wanjun Chen;Jing Zhang;Zhigang Wang;Jin Wei;Bo Zhang;K. J. Chen
通过研究AlGaN/GaN横向场效应整流器（L-FER）的正向和反向特性与器件几何结构（肖特基栅控沟道）和温度的关系，详细研究了L-FER的温度特性。正向电流随着沟道长度的减小而增大，而比导通电阻则呈现正的温度系数。此外，不同的温度依赖的反向特性观察到不同的器件的几何形状的L-FERs。结合肖特基栅控沟道中的碰撞电离和肖特基反向漏电流来理解L-FER的反向击穿。
The temperature-dependent characteristics of AlGaN/GaN lateral field-effect rectifiers (L-FER) are studied in detail by investigating the dependence of forward and reverse characteristics on the device geometry (Schottky-gate-controlled channel) and temperature. The forward current increased with the decrease of channel length, while the specific on-resistance showed a positive temperature coefficient. Moreover, different temperature-dependent reverse characteristics were observed for the L-FERs with different device geometries. A combination of impact ionization in the Schottky-gate-controlled channel and the Schottky reverse leakage current is applied to understand the reverse breakdown of L-FER.