Increasing the extraction efficiency of blue light emitting diodes via laser patterned Ga‐polar p‐GaN surface
Increasing the extraction efficiency of blue light emitting diodes via laser patterned Ga‐polar p‐GaN surface
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DOI：
10.1002/pssa.201127189
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发表时间：
2011-09
期刊：
影响因子：
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通讯作者：
Zhiyuan Zuo;Duo Liu;Baitao Zhang;Jingliang He;Hong Liu;Xiangang Xu
中科院分区：
文献类型：
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作者：
Zhiyuan Zuo;Duo Liu;Baitao Zhang;Jingliang He;Hong Liu;Xiangang Xu
我们在这里报道了激光图案化的Ga-极性p-GaN表面，以通过使用脉冲UV激光器结合反射镜扫描器来提高GaN基蓝光发光二极管（LED）的光提取效率。在p-GaN上产生的图案被证实适合于光提取，并且已经获得了34.9%的电致发光（EL）发射强度增强。还提供了激光对LED的影响和发射轮廓的角度依赖性的详细讨论。这种方法可以扩展到其他III-V LED和SiC上的LED，用于制造高效LED。
We report here the laser patterned Ga‐polar p‐GaN surface to improve the light extraction efficiency of GaN based blue light emitting diodes (LEDs) by using a pulsed UV laser in combination with a mirror scanner. The patterns created on p‐GaN are confirmed to be suitable for light extraction and a 34.9% enhancement of the electroluminescent (EL) emission intensity has been obtained. Detailed discussions on the effects of laser on LEDs and the angular dependence of the emission profile are also provided. This method could be extended to other III–V LEDs and LEDs on SiC for fabricating highly efficient LEDs.