RC-TCIGBT: A Reverse Conducting Trench Clustered

RC-TCIGBT: A Reverse Conducting Trench Clustered
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DOI：
10.1109/ispsd.2007.4294957
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发表时间：
2007-05
期刊：
Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's
影响因子：
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通讯作者：
Dinesh Kumar;M. Sweet;K. Vershinin;L. Ngwendson;E. Narayanan
Dinesh Kumar;M. Sweet;K. Vershinin;L. Ngwendson;E. Narayanan
中科院分区：
其他
文献类型：
--
作者：
Dinesh Kumar;M. Sweet;K. Vershinin;L. Ngwendson;E. Narayanan

文献摘要

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相似文献

提出了一种新的三端反向导通沟槽簇IGBT（RC-TCIGBT），并在1200 V非穿通（NPT）技术中使用数值模拟进行了评估。该器件是在TCIGBT（O. Spulber，et.例如，2000年12月），（K. Vershinin，et.例如，2006年6月）。这种方法不会增加器件面积，并确保在第一（Ist）和第三（IIIrd）象限中的无骤回操作。此外，它表明，RC TCIGBT，这属于MOS双极型器件与可控晶闸管的行动，可以提供良好的Vce（sat）/Eoff权衡和软反向恢复。
A new, three terminal, reverse conducting trench clustered IGBT (RC-TCIGBT) is proposed and evaluated using numerical simulations in 1200 V, non-punch through (NPT) technology. This device is a monolithic integration of an anti- parallel thyristor (APT) in the TCIGBT (O. Spulber, et. al., December 2000), (K. Vershinin, et. al., June 2006). This approach does not increase device area and ensures snap-back free operation in the first (Ist) and third (IIIrd) quadrants. Moreover, it is shown that the RC-TCIGBT which belongs to the class of MOS bipolar devices with controlled thyristor action, can provide excellent Vce (sat)/Eoff trade-off and soft reverse recovery.