Influence of the surface electric field on carrier transfer into InGaAs/GaAs single quantum wells
Influence of the surface electric field on carrier transfer into InGaAs/GaAs single quantum wells
复制标题
表面电场对InGaAs/GaAs单量子阱载流子传输的影响
DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
K. Naudzius
中科院分区：
文献类型：
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作者：
G. Ambrazevičius;S. Marcinkevičius;T. Lideikis;K. Naudzius
研究了InGaAs/GaAs单量子阱结构中量子威尔斯阱距表面不同距离的光致发光和光致发光激发谱。表面电场在载流子转移到量子阱中的作用被证明。在量子阱光致发光激发谱中观察到与GaAs势垒中光激发载流子能量弛豫有关的特征振荡。当载流子转移时间小于电子-电子相互作用的特征时间时，非热化电子弛豫引起的振荡出现。热空穴能量弛豫表现出自己的转移时间是可比的GaAs势垒中的载流子的辐射寿命。
Photoluminescence and photoluminescence excitation spectra of InGaAs/GaAs single quantum well structures with quantum wells located at different distances from the surface have been studied at 2 K. The role of the surface electric field in carrier transfer into a quantum well is demonstrated. Characteristic oscillations related to the energy relaxation of photoexcited carriers in the GaAs barrier have been observed in the quantum well photoluminescence excitation spectra. Oscillations due to relaxation of non-thermalized electrons appear when the carrier transfer time is shorter than the characteristic time of electron-electron interaction. Hot-hole energy relaxation manifests itself when the transfer time is comparable to the radiative lifetime of the carrier in the GaAs barrier.