Cd-composition induced effects on structure, optical and electrical properties of sputtered Zn1−xCdxO films
Cd-composition induced effects on structure, optical and electrical properties of sputtered Zn1−xCdxO films
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DOI：
10.1016/j.ceramint.2014.12.106
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发表时间：
2015-05
影响因子：
5.2
通讯作者：
Y. Sui;Y. Yue;Yanping Song;B. Yao;Yaxin Cao;J. Lang;X. Y. Li;Jianchun Yang
中科院分区：
文献类型：
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作者：
Y. Sui;Y. Yue;Yanping Song;B. Yao;Yaxin Cao;J. Lang;X. Y. Li;Jianchun Yang
采用直流反应磁控溅射和后退火工艺，在石英衬底上成功地制备了不同Cd含量(0−x≤1)的薄膜。研究发现，通过改变Cd含量可以调节薄膜的结构、带隙和电学性质。−_xCd_xO薄膜由高度(002)择优取向的纤锌矿相，ATx=0.5的纤锌矿和立方相的混合相，以及高度(200)择优取向的立方相ATx≥0.8组成。对于纤锌矿结构的Zn_1-−_xCd_xO，禁带宽度从3.25 eV_(Atx)=0降至2.75 eV_(Atx)=0.2，禁带宽度从2.52 eV_(Atx)=0.8降至2.42(eV_(Atx)=1)，而立方结构的Zn_1-−_xCd_xO的带隙变化不大。另外，霍尔测量结果表明，Cd含量对−薄膜的电导行为有显著的影响。用X射线光电子能谱分析了−薄膜的化学成分和成键状态。
Zn1−xCdxO films with different Cd contents (0≤x≤1) were successfully deposited on quartz substrates by the direct current reactive magnetron sputtering and post-annealing techniques. It was found that structures, band gaps and electrical properties of the films can be tuned by changing Cd contentsx. The Zn1−xCdxO film consists of wurtzite phase with highly (002)-preferred orientation atxfrom 0 to 0.2, mixture of wurtzite and cubic phases atx=0.5, and cubic phase with highly (200)-preferred orientation atx≥0.8. The band gap decreases from 3.25 eV atx=0 to 2.75 eV atx=0.2 for the wurtzite Zn1−xCdxO, and decreases from 2.52 eV atx=0.8 to 2.42 eV atx=1, which has a little change for cubic Zn1−xCdxO. In addition, Hall measurement results indicate that the influence of Cd content on the conduction behavior of Zn1−xCdxO films is significant. The chemical compositions and the bonding states of Zn1−xCdxO films were examined by X-ray photoelectron spectroscopy analysis.