Localized in situ cladding annealing for post-fabrication trimming of silicon photonic integrated circuits.
Localized in situ cladding annealing for post-fabrication trimming of silicon photonic integrated circuits.
复制标题
用于硅光子集成电路制造后修整的局部原位熔覆退火。
作者：
S. Spector;J. Knecht;P. Juodawlkis
我们报告了利用原位加热器局部退火来诱导环形谐振器滤波器中包层折射率的半永久性变化。与其他加工后的修整方法相比，这种方法的优点是，除了供电外，不需要额外的设备来引起指标的变化。使用两种包层材料：用于外部退火的样品的氢硅氧烷（HSQ）和用于原位加热器退火的样品的PECVD氧化物。HSQ和PECVD包层滤波器的谐振波长可分别调节3.0 nm和1.7 nm。演示了5通道单环滤波器组和单环双环滤波器的修剪。
We report the use of localized annealing via in situ heaters to induce a semi-permanent change in the refractive index of the cladding in ring resonator filters. When compared to other methods for post-fabrication trimming, this method has the advantage that no additional equipment, other than a supply of electrical power, is necessary to cause the index change. Two cladding materials were used: hydrogen silsesquioxane (HSQ) for samples that were externally annealed, and PECVD oxide for samples that were annealed with in situ heaters. The resonant wavelengths could be adjusted by as much as 3.0 nm and 1.7 nm for the HSQ and PECVD cladded filters, respectively. The trimming of a 5 channel, single ring filter bank, and a single, double ring filter is demonstrated.