Effect of patterning on the saturation magnetization in MgO based nanopillars

Effect of patterning on the saturation magnetization in MgO based nanopillars
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图案化对 MgO 基纳米柱饱和磁化强度的影响

DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
C. Chappert
C. Chappert
中科院分区：
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文献类型：
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作者：
S. Cornelissen;L. Bianchini;A. Helmer;T. Devolder;Joo;M. O. D. Beeck;W. Roy;L. Lagae;C. Chappert

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我们研究了纳米柱图案化对MgO磁性隧道结中CoFeB自由层的饱和磁化强度的影响。在图案化之前，通过铁磁共振测量自由层的磁化强度，并且发现自由层的磁化强度接近体值，没有可检测的界面各向异性。在图案化之后，形状各向异性和主自旋波模式的频率指示自由层磁化显著减小。电流相关的测量表明，这不是由于焦耳加热。尺寸相关的测量结果表明，磁化强度的降低最有可能是由于在蚀刻步骤过程中的损伤。
We have studied the effect of nanopillar patterning on the saturation magnetization of the CoFeB free layer in MgO magnetic tunnel junctions. Before patterning, the free layer magnetization is measured by ferromagnetic resonance and is found to be close to the bulk value, with no detectable interface anisotropy. After patterning, the shape anisotropy and the frequency of the main spin wave mode indicate that the free layer magnetization is substantially reduced. Current dependent measurements indicate that this is not due to Joule heating. Size dependent measurements indicate that the magnetization reduction most likely arises from process damage during the etching step.