Grain boundary scattering for temperature coefficient of resistance (TCR) behaviour of Ta-Si-N thin films
Grain boundary scattering for temperature coefficient of resistance (TCR) behaviour of Ta-Si-N thin films
复制标题
DOI：
10.1088/0022-3727/41/18/185404
复制
发表时间：
2008-09-21
影响因子：
3.4
通讯作者：
Chang, Y. L.
中科院分区：
文献类型：
--
作者：
Chung, C. K.;Nautiyal, A.;Chang, Y. L.
本文研究了反应共溅射制备的Ta(X)Si(Y)N(Z)薄膜在不同氮气流量比下的电学性质。在30~100℃温度范围内，用四点探头组成的I-V测量系统测量了薄膜的电阻率和电阻温度系数(TCR)。结果表明，在不同的N(2)流量比下制备的薄膜的电阻率随温度的升高而减小，即为负的TCR。用掠入射X射线衍射仪研究了Ta-Si-N薄膜在不同N(2)流量比(5-30%)下的相形成过程，以及薄膜微观结构从对称宽峰到非对称峰的变化。考虑到晶粒度随N(2)流量比的增加而增大的事实，可以预见，随着晶粒度的增大，电阻率和负TCR的大小增加可能是由于电子在晶界上的散射所致。具有类非晶态结构的粗晶Ta-Si-N材料可能由于晶界面积比高和非金属非晶态SiN(X)的增加而具有较高的电阻率。用晶界散射模型讨论了薄膜的电学性质。
In this study, we have investigated the electrical properties of Ta(x)Si(y)N(z) thin films deposited by reactive co-sputtering at different nitrogen flow ratios. The electrical resistivity and temperature coefficient of resistance (TCR) were measured by an I-V measurement system including the four-point probe from 30 to 100 degrees C. The results indicated that the electrical resistivity decreased with increasing temperature, i.e. negative TCR, in each film prepared at different N(2) flow ratios. The phase formation of a Ta-Si-N film at different N(2) flow ratios (5-30%), as well as the change in microstructure from a symmetric broad peak to an asymmetric peak, was studied by a grazing incident x-ray diffractometer. In view of the fact that the grain size increases with increasing N(2) flow ratio, it would be expected that increasing resistivity and magnitude of negative TCR with increasing grain size nature may be due to scattering of electrons by the grain boundaries. It is probable that coarse grained material of Ta-Si-N with amorphous- like microstructure has a higher electrical resistivity due to the high ratio of the grain boundary area and increase in non-metallic amorphous SiN(x). The electrical properties of these films are also discussed by the grain boundary scattering model.