DYNAMICS OF DEWETTING

DYNAMICS OF DEWETTING
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DOI:
10.1103/physrevlett.66.715
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发表时间:
1991-02-11
影响因子:
8.6
通讯作者:
RONDELEZ, F
RONDELEZ, F
中科院分区:
物理与天体物理1区
文献类型:
--
作者:
REDON, C;BROCHARDWYART, F;RONDELEZ, F

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硅油(或烷烃)沉积在低能表面(接枝硅片)上的薄膜是亚稳定的。我们在晶片中心成核一个干斑,并观察到半径R的干斑的生长速度V=dR/dt。我们发现,V与R无关,(B)与油膜厚度无关,(C)与油的粘度成反比,(D)对油与晶片之间的平衡接触角theta-e的值非常敏感。在小的θ-e处,V几乎等于-θ-E3。所有这些特征与最新的流体力学理论是一致的。
Films of silicone oils (or alkanes) deposited on low-energy surfaces (grafted silicon wafers) are metastable. We nucleate a dry spot at the center of the wafer and observe the rate of growth V = dR/dt of the dry patch of radius R. We find that V is (a) independent of R, (b) independent of the film thickness, (c) inversely proportional to the oil viscosity, and (d) very sensitive to the value of theta-e, the equilibrium contact angle between oil and wafer. At small theta-e, V almost-equal-to theta-e3. All these features are in agreement with a recent hydrodynamic theory.