STT-MRAM-Based PUF Architecture Exploiting Magnetic Tunnel Junction Fabrication-Induced Variability
STT-MRAM-Based PUF Architecture Exploiting Magnetic Tunnel Junction Fabrication-Induced Variability
复制标题
基于 STT-MRAM 的 PUF 架构利用磁隧道结制造引起的变化
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
P. Prinetto
中科院分区：
文献类型：
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作者：
E. Vatajelu;G. D. Natale;M. Barbareschi;L. Torres;Marco Indaco;P. Prinetto
物理不可克隆函数（PUF）是用于实现低成本设备认证和安全密钥生成的新兴密码原语。弱PUF（即，能够生成单个签名或处理有限数量的询问的设备）在文献中被广泛讨论。目前研究最多的解决方案之一是基于SRAM。然而，低功耗、高密度、高性能SoC的快速发展将嵌入式存储器推向了极限，为新兴存储器技术的发展开辟了广阔的空间。自旋转移矩磁性随机存取存储器（STT-MRAM）由于其降低的读/写延迟和高CMOS集成能力而成为嵌入式存储器的有前途的选择。在这篇文章中，我们提出了一个创新的PUF设计的基础上STT-MRAM存储器。我们利用影响磁性隧道结（MTJ）器件在反平行磁化中的电阻的高可变性。我们将证明，所提出的解决方案是强大的，不可克隆的，不可预测的。
Physically Unclonable Functions (PUFs) are emerging cryptographic primitives used to implement low-cost device authentication and secure secret key generation. Weak PUFs (i.e., devices able to generate a single signature or to deal with a limited number of challenges) are widely discussed in literature. One of the most investigated solutions today is based on SRAMs. However, the rapid development of low-power, high-density, high-performance SoCs has pushed the embedded memories to their limits and opened the field to the development of emerging memory technologies. The Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) has emerged as a promising choice for embedded memories due to its reduced read/write latency and high CMOS integration capability. In this article, we propose an innovative PUF design based on STT-MRAM memory. We exploit the high variability affecting the electrical resistance of the Magnetic Tunnel Junction (MTJ) device in anti-parallel magnetization. We will demonstrate that the proposed solution is robust, unclonable, and unpredictable.