Charge carrier dynamics of FeSe thin film investigated by terahertz magneto-optical spectroscopy
Charge carrier dynamics of FeSe thin film investigated by terahertz magneto-optical spectroscopy
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用太赫兹磁光谱学研究FeSe薄膜的载流子动力学
DOI：
10.1103/physrevb.100.035110
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发表时间：
2019-03
影响因子：
3.7
通讯作者：
N. Yoshikawa;Masayuki Takayama;N. Shikama;T. Ishikawa;F. Nabeshima;A. Maeda;R. Shimano
中科院分区：
文献类型：
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作者：
N. Yoshikawa;Masayuki Takayama;N. Shikama;T. Ishikawa;F. Nabeshima;A. Maeda;R. Shimano
我们进行太赫兹磁光光谱的FeSe薄膜，以阐明载流子动力学。测得的对角（纵向）和非对角（霍尔）电导率谱很好地再现由两个载体德鲁德模型，从该模型的载流子密度，散射时间，和电子和空穴载流子的有效质量是在很宽的温度范围内确定。在结构转变温度以下，空穴密度降低，而电子密度增加，这归因于电子相变阶段的能带结构改变。在较低温度下，空穴载流子的散射时间比电子的散射时间长得多，这是低温下正直流霍尔系数增加的原因。
We performed terahertz magneto-optical spectroscopy of FeSe thin film to elucidate the charge carrier dynamics. The measured diagonal (longitudinal) and off-diagonal (Hall) conductivity spectra are well reproduced by a two-carrier Drude model, from which the carrier densities, scattering times, and effective masses of electron and hole carriers are determined in a wide range of temperature. The hole density decreases below the structural transition temperature while electron density increases, which is attributed to the band-structure modification in the electronic nematic phase. The scattering time of the hole carrier becomes substantially longer than that of the electron at lower temperature, which accounts for the increase of the positive dc Hall coefficient at low temperature.