A high-performance self-powered broadband photodetector based on a CH3NH3PbI3 perovskite/ZnO nanorod array heterostructure
A high-performance self-powered broadband photodetector based on a CH3NH3PbI3 perovskite/ZnO nanorod array heterostructure
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DOI：
10.1039/c6tc02097f
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发表时间：
2016-07
影响因子：
6.4
通讯作者：
Jichao Yu;Xu Chen;Yi Wang;Hai Zhou;Mengni Xue;Yang Xu;Zhaosong Li;C. Ye;Jun Zhang;
中科院分区：
文献类型：
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作者：
Jichao Yu;Xu Chen;Yi Wang;Hai Zhou;Mengni Xue;Yang Xu;Zhaosong Li;C. Ye;Jun Zhang;
本文报道了一种基于ZnO/CH_3NH_3PbI_3异质结和MoO_3空穴传输层的自供电光电探测器。有机铅碘化物钙钛矿光电探测器对从紫外光到整个可见光区域（250-800 nm）的宽带波长敏感，在没有外部偏压的情况下，在500 nm处显示出24.3 A W−1的高光响应度和3.56 × 1014 cm Hz 1/2 W−1的高探测率值。同时，我们发现MoO 3层的厚度与其光电探测性能密切相关，MoO 3层同时起到空穴传输层和电子阻挡层的作用，可以有效地减少空穴和电子的复合。此外，所制造的光电探测器表现出良好的稳定性和只有9.3%的光电响应电流衰减后，3个月的光照测试。这种ZnO纳米棒/钙钛矿异质结的高探测率和响应率被清楚地证明，并应广泛适用于其他光电探测器件。
Here we report a self-powered photodetector based on a ZnO/CH3NH3PbI3 heterojunction and a MoO3 hole-transport layer. The organolead iodide perovskite photodetector is sensitive to broadband wavelengths from the ultraviolet light to the entire visible light region (250–800 nm), showing a high photo-responsivity of 24.3 A W−1 and a high detectivity value of 3.56 × 1014 cm Hz1/2 W−1 at 500 nm without external bias voltage. Meanwhile, we found that the photodetective performances are closely related to the thickness of the MoO3 layer, which acts as a hole-transport layer and an electron-blocking layer and can effectively decrease the recombination of holes and electrons. Additionally, the as-fabricated photodetector exhibits good stability and only 9.3% photoelectric response current decay after a 3-month illumination test. The high detectivity and responsivity of such a ZnO nanorod/perovskite heterojunction are clearly demonstrated and should be widely applicable to other photoelectric detection devices.