Epitaxial Growth of High-Quality 4H-SiC Carbon-Face by Low-Pressure Hot-Wall Chemical Vapor Deposition
Epitaxial Growth of High-Quality 4H-SiC Carbon-Face by Low-Pressure Hot-Wall Chemical Vapor Deposition
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采用低压热壁化学气相沉积法外延生长高质量 4H-SiC 碳面
DOI：
10.1143/jjap.42.l637
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发表时间：
2003
影响因子：
1.5
通讯作者：
K. Arai
中科院分区：
文献类型：
--
作者：
K. Kojima;Takaya Suzuki;S. Kuroda;J. Nishio;K. Arai
用低压水平热壁式化学气相沉积系统生长了高质量的4H-碳化硅(C-Face)外延层。在衬底温度约为1600℃、C/Si比为1.5或更低的条件下，获得了镜面形貌。在低压250 mbar、C/Si比0.6~3的C面外延层掺杂过程中，观察到了位竞争行为。当C/Si比为3时，剩余施主浓度最低为7×1014 cm-3。讨论了生长表面形貌好、残留杂质浓度低的C面外延层的最佳条件。
High-quality 4H-SiC Carbon-face (C-face) epitaxial layers have been grown by a low-pressure, horizontal hot-wall type chemical vapor deposition system. A specular surface morphology was obtained at a substrate temperature of about 1600°C and a C/Si ratio of 1.5 or less. The site-competition behavior is observed in the doping process of C-face epitaxial growth at a low pressure of 250 mbar and C/Si ratios between 0.6 and 3. The lowest residual donor concentration of 7 ×1014 cm-3 is obtained at a C/Si ratio of 3. The optimal conditions for growing a C-face epitaxial layer having both a good surface morphology and reduced residual impurity concentration are discussed.