Study of wafer orientation dependence on performance and reliability of CMOS with direct-tunneling gate oxide
Study of wafer orientation dependence on performance and reliability of CMOS with direct-tunneling gate oxide
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具有直接隧道栅氧化物的 CMOS 性能和可靠性的晶圆取向依赖性研究
DOI：
10.1109/vlsit.2001.934955
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
H. Iwai
中科院分区：
文献类型：
--
作者：
H. Momose;T. Ohguro;S. Nakamura;Y. Toyoshima;H. Ishiuchi;H. Iwai
随着传统CMOS缩小尺寸的预期限制，各种新结构，如垂直和凹面MOSFET，正在认真研究中。这些新型MOSFET具有特殊的特征，因为MOSFET的沟道由具有不同晶体取向的各种表面组成。随着栅极氧化物的减薄，氧化物质量的衬底取向依赖性成为主要关注点，因为Si-SiO/sub 2/界面质量控制在抑制隧穿漏电流和提高TDDB可靠性方面变得重要（Sorsch等人，1998年）。本文首次报道了超薄栅氧化层在直接隧穿区的表面取向特性。通过在[100]-、[100] 4/spl deg/off和[111]-取向Si衬底上制造直接隧穿栅CMOS，比较了氧化物和MOSFET特性的各种特性。
With the expected limitations of conventional CMOS downsizing, various new structures, such as vertical and concave MOSFETs, are under serious investigation. These new types of MOSFETs have a special feature in that the channel of the MOSFETs consists of various surfaces with different crystal orientations. With thinning of the gate oxides, the substrate orientation dependence of the oxide quality becomes a major concern, because Si-SiO/sub 2/ interface quality control becomes important in terms of suppressing the tunneling leakage current and improving TDDB reliability (Sorsch et al., 1998). This paper, for the first time, reports the surface orientation dependence of the ultra-thin gate oxide properties in the direct tunneling regime. Various characteristics of the oxide and MOSFET properties were compared by fabricating direct-tunneling gate CMOS on [100]-, [100] 4/spl deg/off, and [111]-oriented Si substrates.