A 2.98pJ/conversion 0.0023mm2 Dynamic Temperature Sensor with Fully On-Chip Corrections

A 2.98pJ/conversion 0.0023mm2 Dynamic Temperature Sensor with Fully On-Chip Corrections
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具有完全片上校正的 2.98pJ/转换 0.0023mm2 动态温度传感器

DOI:
10.1109/isscc42615.2023.10067789
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发表时间:
2023
期刊:
2023 IEEE International Solid- State Circuits Conference (ISSCC)
影响因子:
--
通讯作者:
P. Harpe
P. Harpe
中科院分区:
--
文献类型:
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作者:
Yuting Shen;Hanyue Li;E. Cantatore;P. Harpe

文献摘要

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如今,许多用于IoT和环境监测应用的电池供电SoC都配备了温度传感器。在这些小型化系统中,功率和面积是两个关键问题。温度传感器面临的一个挑战是它们对工艺角和随机失配敏感。通常,需要2点微调和系统非线性误差消除,特别是对于具有两种类型电阻的基于电阻的检测前端,其扩展部分不相关[1],[2]。在大多数出版物中,这些校正是在芯片外和数字化的情况下完成的。特别是对于低功耗传感器,当集成在芯片上时,它们可能比传感器本身消耗更多的功率和面积[3]。本文提出了一种电阻式温度传感器,它集成了片上模拟失调、增益和非线性校正技术,同时保持了最先进的功耗和尺寸性能。原型消耗2.98pJ/转换,面积为0。$0023\text{mm}^{2}$包括所有校正技术,并实现了$+0.7/-0.6 ^{\circ}\mathrm{C}$不准确度。
Nowadays, many battery-operated SoCs for loT and environmental monitoring applications are equipped with temperature sensors. In these miniaturized systems, power and area are two critical concerns. One challenge for temperature sensors is that they are sensitive to process corners and random mismatch. Generally, a 2-point trim and systematic non-linear error removal are required, especially for resistor-based sensing front-ends with two types of resistors, whose spread is partially uncorrelated [1], [2]. These corrections are done off-chip and digitally in most publications. In particular for low power sensors, they may consume more power and area than the sensor itself when integrated on-chip [3]. This work presents a resistive temperature sensor that integrates on-chip analog offset, gain and non-linearity correction techniques, while keeping state-of-the-art power and size performance. The prototype consumes 2.98pJ/conversion with an area of 0. $0023\text{mm}^{2}$ including all the correction techniques and achieves $+0.7/-0.6^{\circ}\mathrm{C}$ inaccuracy.