Droplet induced compositional inhomogeneities in GaAsBi
Droplet induced compositional inhomogeneities in GaAsBi
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DOI：
10.1063/1.4996537
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发表时间：
2017-07-24
影响因子：
4
通讯作者：
Millunchick, Joanna M.
中科院分区：
文献类型：
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作者：
Tait, C. Ryan;Yan, Lifan;Millunchick, Joanna M.
III-V族合金中的成分不均匀性严重影响器件性能。这项工作提供了证据Ga液滴诱导的Bi组合物中的不均匀性，我们建议这是由于在整个表面的Ga通量的变化。这些不均匀性可以通过使用生长中断来操纵，这消除了Ga在生长前沿的积累。出版社：AIP Publishing
Compositional inhomogeneities in III-V alloys heavily influence the device performance. This work presents evidence for Ga droplets inducing inhomogeneities in the Bi composition, which we propose is due to a variation in the Ga flux across the surface. These inhomogeneities may be manipulated through the use of growth interrupts, which eliminate the buildup of Ga at the growth front. Published by AIP Publishing.