Electrical and optical properties of wide-gap n-type Sn2Ta2O7 films
Electrical and optical properties of wide-gap n-type Sn2Ta2O7 films
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DOI：
10.1116/1.5081991
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发表时间：
2019-02
影响因子：
2.9
通讯作者：
Shunichi Suzuki;K. Nishio;N. Kikuchi
中科院分区：
文献类型：
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作者：
Shunichi Suzuki;K. Nishio;N. Kikuchi
采用射频磁控溅射法制备了宽禁带n型Sn2Ta2O7多晶薄膜，并在还原性气氛（N2）中进行了退火处理。已知Sn2Ta2O7显示p型和n型导电性。薄膜的电学和光学性质作为退火时间的函数进行了检查。膜的带隙估计为2.7或3.2 eV，假设分别为间接或直接跃迁。薄膜在300 K时的电导率从2.1 × 10−8 S cm−1（沉积态）增加到最大值2.1 S cm−1（退火14 h）。随着退火时间的增加，电导率的温度依赖性从半导体变为简并半导体行为，这表明在N2中退火产生了氧空位。从迁移率的温度依赖性，发现中性杂质是电子载流子的主要散射中心。宽禁带n型Sn2Ta2O7多晶薄膜的制备是通过射频磁控溅射，然后在还原性气氛（N2）中退火。已知Sn2Ta2O7显示p型和n型导电性。薄膜的电学和光学性质作为退火时间的函数进行了检查。膜的带隙估计为2.7或3.2 eV，假设分别为间接或直接跃迁。薄膜在300 K时的电导率从2.1 × 10−8 S cm−1（沉积态）增加到最大值2.1 S cm−1（退火14 h）。随着退火时间的增加，电导率的温度依赖性从半导体变为简并半导体行为，这表明在N2中退火产生了氧空位。从迁移率的温度依赖性，发现中性杂质是电子载流子的主要散射中心。
Wide-gap n-type Sn2Ta2O7 polycrystalline films were prepared by RF-magnetron sputtering followed by annealing in a reducing atmosphere (N2). Sn2Ta2O7 is known to show both p- and n-type conductivity. The electrical and optical properties of the films were examined as a function of annealing time. The bandgap of the film was estimated to be 2.7 or 3.2 eV assuming an indirect or direct transition, respectively. The electrical conductivity of the film at 300 K increased from 2.1 × 10−8 S cm−1 (as-deposited) to a maximum of 2.1 S cm−1 (annealed for 14 h). The temperature dependence of the conductivity changed from semiconducting to degenerate semiconducting behavior with increasing annealing time, suggesting that oxygen vacancies were generated by the annealing in N2. From the temperature dependence of the mobility, it was found that neutral impurities were the dominant scattering centers for electron carriers.Wide-gap n-type Sn2Ta2O7 polycrystalline films were prepared by RF-magnetron sputtering followed by annealing in a reducing atmosphere (N2). Sn2Ta2O7 is known to show both p- and n-type conductivity. The electrical and optical properties of the films were examined as a function of annealing time. The bandgap of the film was estimated to be 2.7 or 3.2 eV assuming an indirect or direct transition, respectively. The electrical conductivity of the film at 300 K increased from 2.1 × 10−8 S cm−1 (as-deposited) to a maximum of 2.1 S cm−1 (annealed for 14 h). The temperature dependence of the conductivity changed from semiconducting to degenerate semiconducting behavior with increasing annealing time, suggesting that oxygen vacancies were generated by the annealing in N2. From the temperature dependence of the mobility, it was found that neutral impurities were the dominant scattering centers for electron carriers.