Electrical properties of Si/Si bonded wafers based on an amorphous Ge interlayer
Electrical properties of Si/Si bonded wafers based on an amorphous Ge interlayer
复制标题
DOI：
10.1088/1674-4926/39/11/113001
复制
发表时间：
2018-11
影响因子：
5.1
通讯作者：
Shaoming Lin;S. Ke;Yujie Ye;Donglin Huang;Jinyong Wu;Songyan Chen;Cheng Li;Jianyuan Wang;Wei Huang
中科院分区：
文献类型：
--
作者：
Shaoming Lin;S. Ke;Yujie Ye;Donglin Huang;Jinyong Wu;Songyan Chen;Cheng Li;Jianyuan Wang;Wei Huang
在Si键合界面引入非晶Ge（a-Ge）中间层，降低退火温度，获得良好的电学特性。研究了基于非晶Ge的低温圆片键合n-Si/n-Si和p-Si/n-Si结的界面和电学特性。结果表明，当a-Ge膜不浸泡在去离子水中时，气泡密度大大降低。这是由于−OH基团的减少。另外，当样品在400 °C退火20 h后，气泡完全消失。这可以通过在键合界面处的多晶Ge（H2的吸收）的出现来解释。n-Si/n-Si键合晶片的结电阻随退火温度的升高而减小。这与进行高温退火时a-Ge的再结晶相一致。在350 °C退火的Si基PN结的载流子输运符合陷阱辅助隧穿模型，在400 °C退火的载流子输运与载流子复合模型有关。
An amorphous Ge (a-Ge) intermediate layer is introduced into the Si bonded interface to lower the annealing temperature and achieve good electrical characteristics. The interface and electrical characteristics of n-Si/n-Si and p-Si/n-Si junctions manufactured by low-temperature wafer bonding based on a thin amorphous Ge are investigated. It is found that the bubble density tremendously decreases when the a-Ge film is not immersed in DI water. This is due to the decrease of the −OH groups. In addition, when the samples are annealed at 400 °C for 20 h, the bubbles totally disappear. This can be explained by the appearance of the polycrystalline Ge (absorption of H2) at the bonded interface. The junction resistance of the n-Si/n-Si bonded wafers decreases with the increase of the annealing temperature. This is consistent with the recrystallization of the a-Ge when high-temperature annealing is conducted. The carrier transport of the Si-based PN junction annealed at 350 °C is consistent with the trap-assisted tunneling model and that annealed at 400 °C is related to the carrier recombination model.