UV/ozone activation treatment for wafer bonding
UV/ozone activation treatment for wafer bonding
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发表时间：
2003
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通讯作者：
K. Hobart;C. Colinge;G. Ayele;F. Kub
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作者：
K. Hobart;C. Colinge;G. Ayele;F. Kub
研究了在亲水性晶片键合之前，通过紫外线辐射（UV）和臭氧暴露的组合对硅晶片进行预处理的效果。键合速度和键合强度作为曝光条件的函数进行评估。紫外线/臭氧预处理的结果在中等的粘结强度。单独的紫外线曝光导致最高的粘合强度。这些结果取决于暴露时间，在5至10分钟后达到最大值。最后，单独臭氧预处理产生最低的粘结强度。此外，臭氧的结合强度仅作为暴露时间的函数单调降低。键速度也单调下降，作为曝光时间的函数，只有UV除外。结果表明，两个相反的活化过程：脱水和钝化的表面下的臭氧暴露和活化的表面通过UV曝光。仅UV曝光似乎是一种有前途的表面活化技术。
The effect of pre-treating silicon wafers by using combinations of ultraviolet radiation (UV) and ozone exposure, prior to hydrophilic wafer bonding, is investigated. Bond velocity and bond strength are evaluated as a function of the exposure conditions. UV/ozone pre-treatment results in moderate bond strengths. UV exposure alone results in the highest bond strength. These results are dependent on the time of exposure with a maximum reached after five to ten minutes. Finally, ozone alone pre-treatment yields the lowest bond strength. Furthermore, the bond strength for ozone only monotonically decreases as a function of exposure time. The bond velocities also monotonically decrease as a function of exposure time with the exception of UV only. The results suggest two opposing activation processes: dehydration and passivation of the surface under ozone exposure and activation of the surface by UV exposure. UV only exposure appears to be a promising surface activation technique.