Structural and ferroelectric properties of the c‐axis oriented SrBi2Ta2O9 thin films deposited by the radio‐frequency magnetron sputtering
Structural and ferroelectric properties of the c‐axis oriented SrBi2Ta2O9 thin films deposited by the radio‐frequency magnetron sputtering
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DOI：
10.1063/1.117122
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发表时间：
1996-12
影响因子：
4
通讯作者：
T. Song;Joohwi Lee;Hyung-Jin Jung
中科院分区：
文献类型：
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作者：
T. Song;Joohwi Lee;Hyung-Jin Jung
采用射频磁控溅射技术在Pt(111)/Ti/SiO2/Si（001）衬底上沉积SrBi2Ta2O9铁电薄膜。在室温下，氩气压力为0.5 ~ 100 mTorr，溅射功率为2.5 W/cm2。薄膜的取向受氩气压力的影响较大，在30 mTorr的氩气压力下获得了c轴取向的SrBi2Ta2O9薄膜。采用θ - 2θ扫描、摇摆曲线和φ扫描等x射线衍射方法研究了c轴取向SrBi2Ta2O9薄膜的晶体结构。在原子力显微镜下观察到排列良好的微观结构，平均晶粒尺寸约为2000 A。c轴取向薄膜的铁电性能为：当激发电压为3 V时，Pr*−PrΛ和Ec分别为9.7 μC/cm2和50 kV/cm。
Radio‐frequency magnetron sputtering was used to deposit SrBi2Ta2O9 ferroelectric thin films on Pt(111)/Ti/SiO2/Si(001) substrates. Thin films were deposited at room temperature with argon pressures of 0.5–100 mTorr and with sputtering power of 2.5 W/cm2. The crystal orientations of thin films were strongly affected by the argon pressures, the c‐axis oriented SrBi2Ta2O9 thin film was obtained with argon pressure of 30 mTorr. The crystal structures of the c‐axis oriented SrBi2Ta2O9 thin film were investigated by x‐ray diffraction methods: θ‐2θ scan, rocking curve, and φ scans. The well aligned microstructure was observed with the average grain size of about 2000 A in an atomic force microscopic image. Ferroelectric properties were observed for the c‐axis oriented thin film: Pr*−PrΛ and Ec were 9.7 μC/cm2 and 50 kV/cm, respectively, with excitation voltage of 3 V.