Influence of plasma composition on reflectance anisotropy spectra for in situ III-V semiconductor dry-etch monitoring
Influence of plasma composition on reflectance anisotropy spectra for in situ III-V semiconductor dry-etch monitoring
复制标题
DOI：
10.1016/j.apsusc.2015.09.040
复制
发表时间：
2015-12-01
影响因子：
6.7
通讯作者：
Kopnarski, Michael
中科院分区：
文献类型：
--
作者：
Barzen, Lars;Kleinschmidt, Ann-Kathrin;Kopnarski, Michael
反射各向异性光谱（RAS）可用于监测半导体样品的（反应性）离子蚀刻（RIE）。我们目前的结果的影响，Cl-2含量的等离子体气体上的RAS光谱在反应离子刻蚀。在第一步GaAs样品已被使用和RAS光谱进行比较，二次离子质谱（西姆斯）的样品表面和深度分布的结果。在第二步中，已经使用平均反射强度的时间演变作为蚀刻速率的指示来研究III-V族半导体多层系统。在这两种情况下，通常即使大量的Cl-2也不会干扰RAS信号的表面灵敏度。(C)2015 Elsevier B. V.版权所有。
Reflectance anisotropy spectroscopy (RAS) can be used to monitor (reactive) ion etching (RIE) of semiconductor samples. We present results on the influence of the Cl-2 content of the plasma gas on the RAS spectra during reactive ion etching. In a first step GaAs samples have been used and the RAS spectra are compared to results of secondary ion mass spectrometry (SIMS) on sample surfaces and depth profiles. In a second step a III-V semiconductor multilayer system has been investigated using the time-evolution of the average reflected intensity as an indication for the etch rate. In both cases usually even a high amount of Cl-2 does not disturb the surface-sensitivity of the RAS signal. (C) 2015 Elsevier B.V. All rights reserved.