AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels
AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels
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DOI：
10.1063/1.4951004
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发表时间：
2016-05
影响因子：
3.2
通讯作者：
Yuzheng Guo;Hongfei Li;J. Robertson
中科院分区：
文献类型：
--
作者：
Yuzheng Guo;Hongfei Li;J. Robertson
建议使用 AlN 和 Al 氮氧化物电介质层代替 Al2O3 作为金属氧化物场效应晶体管中较高迁移率沟道上栅极电介质叠层的组成部分，以提高其正偏压应力不稳定性的可靠性。据计算，AlN中氮空位的能隙态比Al2O3中氧空位的能隙态距离半导体带隙更远，因此AlN可能不易受到电荷俘获的影响，并具有更好的可靠性能。非晶态 Al2O3 中不利的缺陷能级分布归因于其与更对称键合的 AlN 相比更大的配位无序。还预测Al氮氧化物具有较小的电荷俘获倾向。
AlN and Al oxy-nitride dielectric layers are proposed instead of Al2O3 as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al2O3, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al2O3 is attributed to its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping.