Electrothermal simulation of large-area semiconductor devices
Electrothermal simulation of large-area semiconductor devices
复制标题
大面积半导体器件的电热模拟
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
M. Regnat
中科院分区：
文献类型：
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作者：
C. Kirsch;Rolando Ferrini;T. Offermans;S. Altazin;Matthias Diethelm;R. Hiestand;L. Penninck;B. Ruhstaller;Tilman Beierlein;M. Regnat
薄膜半导体器件中的横向电荷传输受各层的薄层电阻的影响。这可能导致跨大面积器件的不均匀电流分布，从而导致不均匀的亮度，例如，如在有机发光二极管中所观察到的（Neyts等人，2006年）。电能中的电阻损耗通过焦耳加热转换为热能，这导致器件内部的温度升高。另一方面，器件材料的电荷输运性质也是温度依赖性的，因此我们面临着双向耦合的电荷输运问题。已证明，向电气模型添加热效应会显着改变结果（Slawinski等人，2011年）。我们提出了大面积半导体器件一个电极上电位和温度稳态分布的数学模型，以及使用有限元法获得的数值解。
The lateral charge transport in thin-film semiconductor devices is affected by the sheet resistance of the various layers. This may lead to a non-uniform current distribution across a large-area device resulting in inhomogeneous luminance, for example, as observed in organic light-emitting diodes (Neyts et al., 2006). The resistive loss in electrical energy is converted into thermal energy via Joule heating, which results in a temperature increase inside the device. On the other hand, the charge transport properties of the device materials are also temperature-dependent, such that we are facing a two-way coupled electrothermal problem. It has been demonstrated that adding thermal effects to an electrical model significantly changes the results (Slawinski et al., 2011). We present a mathematical model for the steady-state distribution of the electric potential and of the temperature across one electrode of a large-area semiconductor device, as well as numerical solutions obtained using the finite element method.