4f Crystal Field Ground State of the Strongly Correlated Topological Insulator SmB_{6}.
4f Crystal Field Ground State of the Strongly Correlated Topological Insulator SmB_{6}.
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DOI：
10.1103/physrevlett.120.016402
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发表时间：
2017-06
影响因子：
8.6
通讯作者：
M. Sundermann;Hasan Yavacs;Kai-bao Chen;Dae-Jeong Kim;Z. Fisk;D. Kasinathan;M. Haverkort;P. Thalmeier-P
中科院分区：
文献类型：
--
作者：
M. Sundermann;Hasan Yavacs;Kai-bao Chen;Dae-Jeong Kim;Z. Fisk;D. Kasinathan;M. Haverkort;P. Thalmeier-P
利用芯能级非共振非弹性X射线散射研究了强关联拓扑绝缘体SmB {6}中4f流形的晶体电场基态.由更高的多极跃迁产生的散射函数的方向依赖性明确地确定了Sm f^{5} J=5/2组态的Γ_{8}四重态决定了Sm B_{6}的基态对称性，从而决定了Sm B_{6}的拓扑性质。我们的发现与迄今为止报道的密度泛函计算结果相矛盾。
We investigated the crystal-electric field ground state of the 4f manifold in the strongly correlated topological insulator SmB_{6} using core-level nonresonant inelastic x-ray scattering. The directional dependence of the scattering function that arises from higher multipole transitions establishes unambiguously that the Γ_{8} quartet state of the Sm f^{5} J=5/2 configuration governs the ground-state symmetry and, hence, the topological properties of SmB_{6}. Our findings contradict the results of density functional calculations reported so far.