Pressure-controlled interlayer magnetism in atomically thin CrI3
Pressure-controlled interlayer magnetism in atomically thin CrI3
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DOI：
10.1038/s41563-019-0506-1
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发表时间：
2019-12-01
期刊：
影响因子：
41.2
通讯作者：
Shan, Jie
中科院分区：
文献类型：
--
作者：
Li, Tingxin;Jiang, Shengwei;Shan, Jie
堆叠顺序可以影响二维货车范德瓦尔斯材料的物理性质（1）。在这里，我们施加静水压力高达2 GPa的修改堆叠顺序的货车范德华磁性绝缘体CrI 3。我们观察到一个不可逆的层间反铁磁到铁磁的转变，在原子级薄CrI 3的磁性圆二色性和电子隧道测量。这种效应伴随着由偏振拉曼光谱表征的单斜到菱面体堆叠顺序的变化。在未发生结构变化之前，层间反铁磁耦合能随压力的增大而增大近100%。我们的实验揭示了层间铁磁基态，这是建立在散装CrI 3，但没有观察到在本地剥离薄膜。所观察到的磁基态和堆叠顺序之间的相关性与第一原理计算（3）（-8）非常一致，并提出了通过莫尔工程（3）（，9）实现纳米级磁纹理的途径。
Stacking order can influence the physical properties of two-dimensional van der Waals materials(1)'(2). Here we applied hydrostatic pressure up to 2 GPa to modify the stacking order in the van der Waals magnetic insulator CrI3. We observed an irreversible interlayer antiferromagnetic-to-ferromagnetic transition in atomically thin CrI3 by magnetic circular dichroism and electron tunnelling measurements. The effect was accompanied by a monoclinic-to-rhombohedral stacking-order change characterized by polarized Raman spectroscopy. Before the structural change, the interlayer antiferromagnetic coupling energy can be tuned up by nearly 100% with pressure. Our experiment reveals the interlayer ferromagnetic ground state, which is established in bulk CrI3 but not observed in native exfoliated thin films. The observed correlation between the magnetic ground state and the stacking order is in good agreement with first principles calculations(3)(-8) and suggests a route towards nanoscale magnetic textures by moire engineering(3)(,9).