Fourth-generation plasma immersion ion implantation and deposition facility for hybrid surface modification layer fabrication
Fourth-generation plasma immersion ion implantation and deposition facility for hybrid surface modification layer fabrication
复制标题
用于混合表面改性层制造的第四代等离子体浸没离子注入和沉积设备
DOI：
10.1063/1.2870088
复制
发表时间：
2008-02-01
影响因子：
1.6
通讯作者：
Tang, Baoyin
中科院分区：
文献类型：
--
作者：
Wang, Langping;Huang, Lei;Tang, Baoyin
The fourth-generation plasma immersion ion implantation and deposition (PIIID) facility for hybrid and batch treatment was built in our laboratory recently. Comparing with our previous PIIID facilities, several novel designs are utilized. Two multicathode pulsed cathodic arc plasma sources are fixed on the chamber wall symmetrically, which can increase the steady working time from 6 h (the single cathode source in our previous facilities) to about 18 h. Meanwhile, the inner diameter of the pulsed cathodic arc plasma source is increased from the previous 80 to 209 mm, thus, large area metal plasma can be obtained by the source. Instead of the simple sample holder in our previous facility, a complex revolution-rotation sample holder composed of 24 shafts, which can rotate around its axis and adjust its position through revolving around the center axis of the vacuum chamber, is fixed in the center of the vacuum chamber. In addition, one magnetron sputtering source is set on the chamber wall instead of the top cover in the previous facility. Because of the above characteristic, the PIIID hybrid process involving ion implantation, vacuum arc, and magnetron sputtering deposition can be acquired without breaking vacuum. In addition, the PIIID batch treatment of cylinderlike components can be finished by installing these components on the rotating shafts on the sample holder. (C) 2008 American Institute of Physics.
