High Frequency Electrical Characterization of 3D Signal/Ground through Silicon Vias
High Frequency Electrical Characterization of 3D Signal/Ground through Silicon Vias
复制标题
通过硅通孔进行 3D 信号/接地的高频电气表征
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
M. Liehr
中科院分区：
文献类型：
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作者：
S. Adamshick;R. Carroll;M. Rao;Douglas La Tuplie;S. Kruger;J. Burke;M. Liehr
利用硅通孔（TSV）的D集成由于其上级封装效率而得到了广泛的关注，从而导致更高的功能、改进的性能和降低的功耗。为了实现具有TSV技术的3D芯片设计，需要鲁棒的TSV电气模型。特别地，由于信号速度增加到千兆赫（GHz）频谱，高频电特性最好地描述TSV行为。在这封信中，5 £ 50“m TSV的制造使用过孔-中间集成方案，并使用S-参数高达65 GHz的特点。在50 GHz时，测得衰减常数为0.35dB/通孔，时延为0.7ps/通孔。
D integration using through-silicon-vias (TSVs) is gaining considerable attention due to its superior packaging e-ciency resulting in higher functionality, improved performance and a reduction in power consumption. In order to implement 3D chip designs with TSV technology, robust TSV electrical models are required. Speciflcally, due to the increase of signal speeds into the gigahertz (GHz) spectrum, a high frequency electrical characterization best describes TSV behavior. In this letter, 5 £ 50"m TSVs are manufactured using a via-mid integration scheme and characterized using S-parameters up to 65GHz. At 50GHz, the measured attenuation constant is 0.35dB/via with a time delay of 0.7ps/via.