A conduction model for semiconductor-grain-boundary-semiconductor barriers in polycrystalline-silicon films
A conduction model for semiconductor-grain-boundary-semiconductor barriers in polycrystalline-silicon films
复制标题
多晶硅薄膜中半导体晶界半导体势垒的传导模型
DOI：
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发表时间：
1983
影响因子：
3.1
通讯作者：
J. Meindl
中科院分区：
文献类型：
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作者：
N. Lu;L. Gerzberg;Chih;J. Meindl
本文提出了一个定量的俘获模型，用来描述多晶硅薄膜中半导体晶界势垒在宽温度范围内的电学特性。通过分析矩形晶界势垒的高度和宽度，研究了晶界散射对载流子输运的影响。该模型还验证了一个单晶带图的微晶内存在的杂质水平的适用性。载流子输运不仅包括通过俘获效应引起的空间电荷势垒和晶界散射势垒的电子场致发射，还包括越过这些势垒的电子场致发射。热电子发射在高温下占主导地位;然而，在低温下，电子场发射变得更加重要，晶界散射效应是一个重要因素。通过表征I-V特性、电阻率、迁移率和载流子浓度的实验数据，该模型增强了对晶粒尺寸从100 μ m到1 μm、掺杂水平从1 × 1016到8 × 1019 cm-3、测量温度从-176到144°C的多晶硅薄膜中电流输运的理解。最后讨论了该模型的局限性。
A quantitative trapping model is introduced to describe the electrical properties of a semiconductor-grain-boundary-semiconductor (SGBS) barrier in polysilicon films over a wide temperature range. The grain-boundary scattering effects on carrier transport are studied analytically by examining the behavior of the height and width of a rectangular grain-boundary potential barrier. The model also verifies the applicability of a single-crystal band diagram for the crystallite within which an impurity level exists. Carder transport includes not only thermionic field emission through the space-charge potential barrier resulting from trapping effects and through the grain-boundary scattering potential barrier but also thermionic emission over these barriers. Thermionic emission dominates at high temperatures; however, at low temperatures, thermionic field emission becomes more important and the grain-boundary scattering effects are an essential factor. By characterizing the experimental data of theI-Vcharacteristics, resistivity, mobility, and carrier concentration, this model enhances the understanding of the current transport in polysilicon films with grain sizes from 100 Å to 1 µm, doping levels from 1 × 1016to 8 × 1019cm-3, and measurement temperatures from -176 to 144°C. The limitations of the model are also discussed.