Bidirectional single-electron counting and the fluctuation theorem
Bidirectional single-electron counting and the fluctuation theorem
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DOI：
10.1103/physrevb.81.125331
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发表时间：
2010-03-01
影响因子：
3.7
通讯作者：
Schoen, Gerd
中科院分区：
文献类型：
--
作者：
Utsumi, Y.;Golubev, D. S.;Schoen, Gerd
研究了双量子点系统中单电子隧穿的方向分辨全计数统计量，并与马尔可夫随机过程的涨落定理（FT）的预测进行了比较。GaAs/GaAlAs异质结构的实验数据似乎违反了FT。在分析了导致这种差异的各种潜在来源后，我们得出结论，用于研究输运的量子点接触静电计的非平衡散粒噪声引起了强烈的点能级涨落，从而显著影响了隧穿统计量。考虑到这些修改，我们发现了与英国《金融时报》的一致性。
We investigate the direction-resolved full counting statistics of single-electron tunneling through a double quantum-dot system and compare with predictions of the fluctuation theorem (FT) for Markovian stochastic processes. Experimental data obtained for GaAs/GaAlAs heterostructures appear to violate the FT. After analyzing various potential sources for the discrepancy we conclude that the nonequilibrium shot noise of the quantum point contact electrometer, which is used to study the transport, induces strong dot-level fluctuations which significantly influence the tunneling statistics. Taking these modifications into account we find consistency with the FT.