Large-Scale Sublattice Asymmetry in Pure and Boron-Doped Graphene.-猫眼课题宝

DOI：

10.1021/acs.nanolett.6b01795

发表时间：

2016-06

期刊：

Nano letters

影响因子：

10.8

通讯作者：

中科院分区：

材料科学1区

文献类型：

作者：

D. Usachov;A. Fedorov;O. Vilkov;A. Petukhov;A. Rybkin;A. Ernst;M. Otrokov;E. Chulkov;I. Ogorodnikov;M. Kuznetsov;L. Yashina;E. Kataev;A. V. Erofeevskaya;V. Voroshnin;V. K. Adamchuk;C. Laubschat;D. Vyalikh

未来基于石墨烯的电子学的实现基本上受到石墨烯电子结构中没有带隙的限制。目前，关于如何以可重现和工艺兼容的方式产生带隙的选择非常有限。引入大规模亚晶格不对称性是石墨烯带隙工程的一种很有前途的方法。利用光电子衍射和光谱，我们证明了硼杂质只选择性地掺入到两个石墨烯亚晶格中的一个中。结果表明，在Co(0001)表面取向良好的石墨烯中，碳原子占据了与Co晶格不同的两个位置，即顶位和空位。嵌入到石墨烯晶格中的硼杂质由于与Co图案的位置特定的相互作用而优选地占据空位。我们的理论计算表明，这种掺硼石墨烯具有可由掺杂浓度精确控制的带隙。因此，掺杂不对称的B-石墨烯是一种新型的材料，是一种很好的电子应用候选材料。

The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reproducible and processing compatible manner are very limited at the moment. A promising approach for the graphene band gap engineering is to introduce a large-scale sublattice asymmetry. Using photoelectron diffraction and spectroscopy we have demonstrated a selective incorporation of boron impurities into only one of the two graphene sublattices. We have shown that in the well-oriented graphene on the Co(0001) surface the carbon atoms occupy two nonequivalent positions with respect to the Co lattice, namely top and hollow sites. Boron impurities embedded into the graphene lattice preferably occupy the hollow sites due to a site-specific interaction with the Co pattern. Our theoretical calculations predict that such boron-doped graphene possesses a band gap that can be precisely controlled by the dopant concentration. B-graphene with doping asymmetry is, thus, a novel material, which is worth considering as a good candidate for electronic applications.

Large-Scale Sublattice Asymmetry in Pure and Boron-Doped Graphene.

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