Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator
Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator
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DOI：
10.1103/physrevlett.119.077702
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发表时间：
2017-08-18
影响因子：
8.6
通讯作者：
Liu, Luqiao
中科院分区：
文献类型：
--
作者：
Han, Jiahao;Richardella, A.;Liu, Luqiao
拓扑绝缘体中强自旋-动量耦合的电子态是实现高效磁开关的重要途径。然而，以往的研究表明，电荷-自旋转换效率的差异很大。此外，电流感应磁开关与TI只能在低温下观察到。我们报道了室温下具有垂直磁各向异性的铁磁-亚铁磁体异质结构中的自旋-轨道转矩开关。得到的有效自旋霍尔角TI是大大大于以前研究的重金属。我们的研究结果表明，强大的电荷自旋转换TI，并提供了一个直接的途径适用的TI为基础的自旋电子器件。
The strongly spin-momentum coupled electronic states in topological insulators (TI) have been extensively pursued to realize efficient magnetic switching. However, previous studies show a large discrepancy of the charge-spin conversion efficiency. Moreover, current-induced magnetic switching with TI can only be observed at cryogenic temperatures. We report spin-orbit torque switching in a TI-ferrimagnet heterostructure with perpendicular magnetic anisotropy at room temperature. The obtained effective spin Hall angle of TI is substantially larger than the previously studied heavy metals. Our results demonstrate robust charge-spin conversion in TI and provide a direct avenue towards applicable TI-based spintronic devices.