1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate
1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate
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DOI：
10.1063/1.1510967
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发表时间：
2002-09-30
影响因子：
4
通讯作者：
Sakai, S
中科院分区：
文献类型：
--
作者：
Wang, T;Liu, YH;Sakai, S
通过引入AlInGaN/AlGaN四元系作为有源区，我们制造了发射波长为348 nm的紫外发光二极管（LED）。在裸芯片几何结构下，注入电流为 50 mA 时，光功率为 1 mW，这是在蓝宝石基板上生长的发射波长约为 350 nm 的 UV-LED 中最高的报告。这意味着此类LED的光功率足够高，可以在实际应用中使用。与此相反，基于GaN/AlGaN系统作为有源区的类似UV-LED也已经生长出来，其光功率比AlInGaN/AlGaN基UV-LED小一个数量级。温度依赖性光致发光研究表明，AlInGaN/AlGaN材料体系中存在较强的激子局域化效应，而GaN/AlGaN材料体系中不存在明显的激子局域化效应。因此，AlInGaN/AlGaN基UV-LED的高性能可归因于增强的激子局域化效应。 (C) 2002 年美国物理研究所。
By introducing the AlInGaN/AlGaN quaternary system as an active region, we fabricated an UV light-emitting diode (LED) with an emission wavelength of 348 nm. The optical power is 1 mW at an injection current of 50 mA under a bare-chip geometry, which is the highest report among UV-LEDs with an emission wavelength of around 350 nm grown on sapphire substrate. It means that the optical power of such LEDs is high enough to be used in practical application. In contrast to it, a similar UV-LED based on GaN/AlGaN system as an active region has been also grown, whose optical power is less than that of the AlInGaN/AlGaN-based UV-LED by one order of magnitude. The temperature-dependent photoluminescence study indicates that there exists a strong exciton-localization effect in the AlInGaN/AlGaN material system, while there is no distinguished exciton-localization effect in the GaN/AlGaN material system. Therefore, the high performance of the AlInGaN/AlGaN-based UV-LED can be attributed to the enhanced exciton-localization effect. (C) 2002 American Institute of Physics.