Temperature dependence and bowing of the bandgap in ZnSe1−xOx
Temperature dependence and bowing of the bandgap in ZnSe1−xOx
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DOI：
10.1063/1.1719274
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发表时间：
2004-04
影响因子：
4
通讯作者：
A. Polimeni;M. Capizzi;Y. Nabetani;Y. Ito;T. Okuno;T. Kato;T. Matsumoto;T. Hirai
中科院分区：
文献类型：
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作者：
A. Polimeni;M. Capizzi;Y. Nabetani;Y. Ito;T. Okuno;T. Kato;T. Matsumoto;T. Hirai
我们研究了未处理和氢辐照的ZnSe 1-xOx（x=0.23%-0.90%）合金的带隙的温度依赖性，从T=10 K到室温的光致发光。带隙能量随T的变化与ZnSe的类似，并且不依赖于氧浓度。这表明ZnSe中的氧掺入不会导致在GaAs和GaP中观察到的氮掺入的载流子局部化。相应地，在氢化的ZnSe 1 −xOx中没有观察到氢和氧之间的相互作用。
We investigated the temperature dependence of the bandgap of untreated and hydrogen-irradiated ZnSe1−xOx (x=0.23%–0.90%) alloys by photoluminescence from T=10 K to room temperature. The variation of the bandgap energy with T is similar to that of ZnSe, and does not depend on the oxygen concentration. This indicates that oxygen incorporation in ZnSe does not lead to the carrier localization observed for nitrogen incorporation in GaAs and GaP. Correspondingly, no interaction between hydrogen and oxygen is observed in hydrogenated ZnSe1−xOx.