GaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure
GaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure
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DOI：
10.1063/1.4706573
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发表时间：
2012-04-15
影响因子：
3.2
通讯作者：
Volz, K.
中科院分区：
文献类型：
--
作者：
Beyer, A.;Ohlmann, J.;Volz, K.
Si（001）上的GaP层可以用作各种新型光电器件的伪衬底。差距成核层的质量是此类器件性能的关键参数。特别是，反相畴（APD）在Si表面上的单原子步骤演变可以不利地影响层的质量。APD及其边界的大小、形状和可能的电荷取决于周围晶体的极性。所观察到的差距是由A型的双步骤配置的Si-表面重建之前GaP生长和普遍的约束下优化的生长条件下的Ga到Si。可以通过改变生长条件来改变GaP层的极性以及因此在Si-III/V界面处的原子配置。利用这些知识，可以在Si衬底上生长用于III/V器件集成的无缺陷GaP/Si（001）模板。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4706573]
GaP-layers on Si(001) can serve as pseudo-substrates for a variety of novel optoelectronic devices. The quality of the GaP nucleation layer is a crucial parameter for the performance of such devices. Especially, anti-phase domains (APDs) evolving at mono-atomic steps on the Si-surface can affect the quality of a layer adversely. The size, shape, and possible charge of the APDs and their boundaries depend on the polarity of the surrounding crystal. The observed polarity of the GaP is caused by the A-type double step configuration of the Si-surface reconstruction prior to GaP growth and the prevalent binding of Ga to Si under optimized growth conditions. The polarity of the GaP-layer and hence the atomic configuration at the Si-III/V interface can be changed by altering the growth conditions. With this knowledge, defect-free GaP/Si(001) templates for III/V device integration on Si-substrates can be grown. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4706573]