1.23-ns Pulsewidth of Quenched High Gain GaAs Photoconductive Semiconductor Switch at 8-nJ Excitation
1.23-ns Pulsewidth of Quenched High Gain GaAs Photoconductive Semiconductor Switch at 8-nJ Excitation
复制标题
8 nJ 激励下淬火高增益 GaAs 光电导半导体开关的 1.23 ns 脉冲宽度
DOI：
10.1109/led.2016.2593029
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发表时间：
2016
影响因子：
4.9
通讯作者：
Shi Wei
中科院分区：
文献类型：
--
作者：
Xu Ming;Li Ruibing;Ma Cheng;Shi Wei
在这封信中，我们表明，淬火高增益（HG）操作的砷化镓光电导半导体开关可以实现低至8 nJ的激发能量。最小脉冲宽度为1.23 ns，相应的偏置电场为71.8 kV/cm。雪崩增益的概念被提出来验证雪崩电平保持在淬火HG操作。
In this letter, we show that the quenched high gain (HG) operation of gallium arsenide photoconductive semiconductor switches can be achieved with an excitation energy as low as 8 nJ. The minimum pulse width of 1.23 ns is obtained and the corresponding bias electric field is 71.8 kV/cm. The concept of an avalanche gain is proposed to verify that the avalanche level is remained in the quenched HG operation.