Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature
Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature
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DOI：
10.1002/smll.201101016
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发表时间：
2012-01-09
期刊：
影响因子：
13.3
通讯作者：
Zhang, Hua
中科院分区：
文献类型：
--
作者：
Li, Hai;Yin, Zongyou;Zhang, Hua
李海，尹宗友，何其源，李宏，黄晓，陆刚，Derrick Wen Hui Fam, Alfred ing yong Tok，张庆，张华*高灵敏度、低成本、低功耗便携式气体传感器[j]基于场效应管的电子气体传感器已经显示出很好的结果。[2,4 - 6,8,26,33 - 35]一维半导体，如碳纳米管[33-35]和半导体纳米线[36-38]是用于基于场效应晶体管的传感器的常用沟道材料。由于其独特的电子特性和较大的比表面积，二维石墨烯片在电子传感领域也受到青睐。[1-8]此外，与一维半导体相比，石墨烯片的二维结构允许更好地吸附气体分子，并导致更低的电噪声和更低的检测限。[2,4 - 6,26]因此，基于石墨烯的气体传感器已经实现了低至单分子水平的灵敏度MoS2薄片是石墨烯的半导体类似物，因此有望成为传感应用的潜在候选者。在这篇通讯中，我们报告了使用机械剥离方法制备单层和多层MoS2薄膜的系统研究。所制备的MoS2 FET器件表现出n型掺杂行为。作为概念验证，单层和多层MoS2场效应管被用于检测NO的吸附。结果表明，基于双层（2L）、三层（3L）和四层（4L） MoS2薄膜的FET传感器对NO具有较高的灵敏度，检测限为0.8 ppm，而单层（1L） MoS2器件的响应速度较快，但不稳定。
Hai Li, Zongyou Yin, Qiyuan He, Hong Li, Xiao Huang, Gang Lu, Derrick Wen Hui Fam, Alfred Iing Yoong Tok, Qing Zhang, and Hua Zhang* highly sensitive, low cost, and portable gas sensors with low power consumption.[2] Electronic gas sensors based on FETs have shown promising results.[2, 4–6, 8, 26, 33–35] One-dimensional semiconductors, such as carbon nanotubes [33–35] and semiconductor nanowires,[36–38] are popular channel materials used for FET-based sensors. 2D graphene sheets are also favored in electronic sensing because of their unique electronic properties and large specific surface area.[1–8] In addition, the 2D configuration of graphene sheets, compared to 1D semiconductors, allows for the better adsorption of gas molecules and leads to lower electrical noise and lower detection limits.[2, 4–6, 26] As a result, the graphene-based gas sensor has achieved a sensitivity down to the single-molecule level.[2] MoS2 sheets, the semiconducting analogue of graphene, are thus expected to be a potential candidate for sensing applications.In this communication, we report a systematic study of the fabrication of single-and multilayer MoS2 films using the mechanical exfoliation method. The fabricated MoS2 FET devices show n-type doping behavior. As a proof of concept, the single-and multilayer MoS2 FETs were used to detect the adsorption of NO. It was found that the FET sensors based on bilayer (2L), trilayer (3L), and quadrilayer (4L) MoS2 films exhibited a high sensitivity to NO with detection limit of 0.8 ppm, while the single-layer (1L) MoS2 device showed a rapid but unstable response.