Imaging of microwave permittivity, tunability, and damage recovery in (Ba, Sr)TiO3 thin films
Imaging of microwave permittivity, tunability, and damage recovery in (Ba, Sr)TiO3 thin films
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DOI：
10.1063/1.125270
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发表时间：
1999-11-15
影响因子：
4
通讯作者：
Melngailis, J
中科院分区：
文献类型：
--
作者：
Steinhauer, DE;Vlahacos, CP;Melngailis, J
我们描述了使用近场扫描微波显微镜定量成像的介电常数和可调谐性的薄膜电介质样品的长度尺度为1 μ m。我们证明了这种技术与介电常数图像和局部磁滞回线的370 nm厚的Ba0.6Sr0.4TiO3薄膜在7.2 GHz。我们还观察到退火的作用，在恢复的介电可调谐性在受损区域的薄膜。我们可以测量相对介电常数ε（r）在ε（r）= 500时小至2的变化，以及介电可调谐性d ε（r）/dV小至0.03 V-1的变化。(C)1999年美国物理学会。[S0003-6951（99）00446-5]。
We describe the use of a near-field scanning microwave microscope to quantitatively image the dielectric permittivity and tunability of thin-film dielectric samples on a length scale of 1 mu m. We demonstrate this technique with permittivity images and local hysteresis loops of a 370-nm-thick Ba0.6Sr0.4TiO3 thin film at 7.2 GHz. We also observe the role of annealing in the recovery of dielectric tunability in a damaged region of the thin film. We can measure changes in relative permittivity epsilon(r) as small as 2 at epsilon(r) = 500, and changes in dielectric tunability d epsilon(r)/dV as small as 0.03 V-1. (C) 1999 American Institute of Physics. [S0003-6951(99)00446-5].