Analysis of phonon-induced spin relaxation processes in silicon
Analysis of phonon-induced spin relaxation processes in silicon
复制标题
硅中声子引起的自旋弛豫过程的分析
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
H. Dery
中科院分区：
文献类型：
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作者：
Yang Song;H. Dery
我们研究了由于电子-声子相互作用对硅中传导电子自旋弛豫的所有前序贡献。利用群论、扩展周期微扰方法和刚性离子模型，我们导出了多谷导带中所有重要的自旋-翻转跃迁的矩阵元表达式。散射角与电子的波矢、声子极化、谷位和电子的自旋取向有明显的依赖关系。将推导出的解析表达式与经验赝势和绝热能带电荷模型的结果进行了比较，结果显示出很好的一致性。
We study all of the leading-order contributions to spin relaxation of conduction electrons in silicon due to the electron-phonon interaction. Using group theory, the $kifmmodecdotelse extperiodcenteredfi{}p$ perturbation method, and the rigid-ion model, we derive an extensive set of matrix element expressions for all of the important spin-flip transitions in the multivalley conduction band. The scattering angle has an explicit dependence on the electron wave vectors, phonon polarization, valley position, and spin orientation of the electron. Comparison of the derived analytical expressions with results of empirical pseudopotential and adiabatic band charge models shows excellent agreement.