Microcavity interferometry for MEMS device characterization
Microcavity interferometry for MEMS device characterization
复制标题
用于 MEMS 器件表征的微腔干涉测量
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
P. Goetz
中科院分区：
文献类型：
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作者：
T. Stievater;W. Rabinovich;H. Newman;J. Ebel;R. Mahon;D. McGee;P. Goetz
我们已经开发了一种高分辨率的光学技术来测量MEMS微结构的机电性能。该技术被应用到微桥共面射频（RF）波导的电容开关。基板上的薄金属接地层和桥的底部一起形成用于光束的微腔。腔模的波长是桥相对于衬底的位置的敏感量度。该技术适用于测量不同长度的微桥的谐振和阻尼时间。它也被用来测量直流变化的桥梁高度的十分之一纳米，驱动交流位移小于一皮米，和桥梁位移噪声的数百个femtometers每根赫兹。这种极端的灵敏度超过了以前证明的光学表征方法。
We have developed a high resolution optical technique to measure the electromechanical properties of MEMS microstructures. The technique is applied to microbridges developed for capacitive switching in coplanar radio frequency (RF) waveguides. The thin metal ground plane on the substrate and the bottom of the bridge together form a microcavity for an optical beam. The wavelength of a cavity mode is a sensitive measure of the bridge position relative to the substrate. The technique is applied to the measurement of resonances and damping times of microbridges of varying lengths. It is also used to measure dc changes in bridge height of tenths of nanometers, driven ac displacements of less than a picometer, and bridge displacement noise of hundreds of femtometers per root Hertz. This extreme sensitivity exceeds previously demonstrated optical characterization methods.