Raman fingerprint of charged impurities in graphene
Raman fingerprint of charged impurities in graphene
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DOI：
10.1063/1.2818692
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发表时间：
2007-12-03
影响因子：
4
通讯作者：
Ferrari, A. C.
中科院分区：
文献类型：
--
作者：
Casiraghi, C.;Pisana, S.;Ferrari, A. C.
我们报告了通过微机械解理获得的不同单层石墨烯样品的拉曼光谱的强烈变化。这揭示了超额收费的存在，即使在没有故意使用兴奋剂的情况下。根据G峰位移和宽度以及二阶二维峰的位置和相对强度的变化，可以估计出高达10(13)cm（-2）的掺杂浓度。不对称的G峰表明在小于1 μ m的尺度上电荷不均匀。(c) 2007年美国物理研究所。
We report strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage. This reveals the presence of excess charges, even in the absence of intentional doping. Doping concentrations up to similar to 10(13) cm(-2) are estimated from the G peak shift and width and the variation of both position and relative intensity of the second order 2D peak. Asymmetric G peaks indicate charge inhomogeneity on a scale of less than 1 mu m. (c) 2007 American Institute of Physics.