Conduction mechanisms in erbium silicide Schottky diodes
Conduction mechanisms in erbium silicide Schottky diodes
复制标题
硅化铒肖特基二极管的传导机制
DOI：
10.1063/1.352899
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
J. Storey
中科院分区：
文献类型：
--
作者：
M. Unewisse;J. Storey
在25至160 K的温度范围内研究了n型硅上的硅化铒肖特基二极管的导电机制。在70 K以上，热离子发射是主要的载流子输运机制.低于该温度时，零偏势垒高度和理想因子的偏差很明显。然而，平带势垒高度在整个温度范围内保持恒定。费米能级被钉扎在导带上。定义了一个新的量，即平带饱和电流（Isf）。发现n ln（Isf/T2）与1/T的曲线与超过28个数量级的数据非常拟合。从这些图中可以直接获得平带势垒高度和修改后的理查森常数。这种技术提供了一种完全自洽的，比以前的方法更可靠的方法来获得这些参数。在低温和低正向偏压下，通过表面态隧穿的复合成为主要的导电机制。
Conduction mechanisms in erbium silicide Schottky diodes on n‐type silicon have been studied over a temperature range of 25 to 160 K. Thermionic emission is the dominant carrier transport mechanism above 70 K. Below this temperature, deviations are apparent in the zero‐bias barrier height and ideality factor. However, the flat‐band barrier height is shown to remain constant over the entire temperature range. The Fermi level is demonstrated to be pinned to the conduction band. A new quantity, the flat‐band saturation current (Isf) is defined. Plots of n ln(Isf/T2) vs 1/T are found to give an excellent fit to the data over 28 orders of magnitude. From these plots the flat‐band barrier height and the modified Richardson constant are obtained directly. This technique provides a completely self‐consistent and more reliable way of obtaining these parameters than do previous methods. For low temperatures and low forward bias, recombination via tunneling through surface states becomes the dominant conduction mech...