The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon
The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon
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DOI：
10.1088/0953-8984/12/49/312
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发表时间：
2000-12
期刊：
影响因子：
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通讯作者：
S. Pizzini;M. Guzzi;E. Grilli;G. Borionetti
中科院分区：
文献类型：
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作者：
S. Pizzini;M. Guzzi;E. Grilli;G. Borionetti
有大量的文献报道表明，过配位的氧或自间隙原子直接或间接地是热施主、氧沉淀物和位错之间的化学桥梁，能够支持它们在0.7-0.9 eV范围内发射特征的共同来源。这项工作的目的是找到这些建议的实验证据，这既需要适当的样品制备，也需要仔细的光学、电学和显微表征。我们不仅能够证明氧化物沉淀物的光致发光发射可以与它们的密度和周围封闭位错环的存在相关，而且位错的前驱也是光学活跃的。对于在热施主范围内热退火的样品，我们能够表明它们的光学活性似乎与热施主的浅施主水平到CiO2络合物的深能级的跃迁有关。
There is a wide set of literature reports that suggest that over-coordinated oxygen or self-interstitials are, directly or indirectly, the chemical bridge between thermal donors, oxygen precipitates and dislocations, capable of supporting a common origin of their emission features in the 0.7-0.9 eV range. Finding the experimental proof of these suggestions was the aim of this present work, which required both appropriate preparation of samples and their careful optical, electrical and microscopical characterization. We were able to show not only that the photoluminescence emissions from oxide precipitates could be correlated to their density and to the presence of closed dislocation rings around them, but also that the precursors of dislocations are optically active as well. For samples thermally annealed in the range of thermal donors, we were able to show that their optical activity seems to be correlated to a transition from a shallow donor level of thermal donors to a deep level of a CiO2 complex.