Crystal growth and characterizations of highly oriented BiFeO3 thin films
Crystal growth and characterizations of highly oriented BiFeO3 thin films
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DOI：
10.1149/1.2063307
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发表时间：
2005-11
影响因子：
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通讯作者：
Y. J. Lee;Chun-Sheng Liang;Jenn‐Ming Wu
中科院分区：
文献类型：
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作者：
Y. J. Lee;Chun-Sheng Liang;Jenn‐Ming Wu
(BFO)通过RF磁控溅射在（Pt）、（LNO）和（BPO）衬底上沉积纯钙钛矿相的膜。BFO薄膜在Pt衬底上的取向是随机的，而在LNO和BPO衬底上分别得到了高度（100）取向和（111）取向的薄膜。研究了底电极对晶体生长、表面形貌、漏电行为、介电和铁电性能的影响。测得（100）取向BFO薄膜的二次剩余极化（2Pr）和矫顽场（2Ec）约为和，（111）取向BFO薄膜的二次剩余极化（2Pr）和矫顽场（2Ec）约为和。
(BFO) films of pure perovskite phase were deposited on (Pt),(LNO), and (BPO) substrates by rf magnetron sputtering. The BFO film was grown with random orientations on Pt whereas highly (100)-oriented and (111)-oriented ones were obtained on LNO and BPO, respectively. The influence of the bottom electrode on crystal growth, surface topography, leakage behavior, dielectric and ferroelectric properties was investigated. Twice remnant polarizations (2Pr) and coercive fields (2Ec) of the (100)-oriented BFO film were measured to be about and, while those of (111)-oriented ones were approximately and.